发明名称 |
Method and Structure to Reduce FET Threshold Voltage Shift Due to Oxygen Diffusion |
摘要 |
Oxygen scavenging material embedded in an isolation structure provides improved protection of high dielectric constant (Hi-K) materials from oxygen contamination while avoiding alteration of work function and switching threshold shift in transistors including such Hi-K materials. |
申请公布号 |
US2015287629(A1) |
申请公布日期 |
2015.10.08 |
申请号 |
US201514741618 |
申请日期 |
2015.06.17 |
申请人 |
International Business Machines Corporation |
发明人 |
Baiocco Christopher V.;Chudzik Michael P.;Nair Deleep R.;Shah Jay M. |
分类号 |
H01L21/762;H01L29/06 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Armonk NY US |