SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, LED ELEMENT AND ELECTRON-BEAM-PUMPED LIGHT SOURCE DEVICE

摘要

Achieved are: a semiconductor light emitting element which comprises an active layer that is configured from a nitride semiconductor containing Al and uses a plane other than the c-plane as the growth plane; and a method for manufacturing the semiconductor light emitting element. A manufacturing method according to the present invention comprises: a step (a) for preparing a growth substrate; a step (b) for growing a first layer that is formed of Alx1Gay1In1-x1-y1N (wherein 0 < x1 ≤ 1 and 0 ≤ y1 ≤ 1) on the growth substrate in the <0001> direction; a step (c) for forming a groove in the first layer so that the groove extends in the <11-20> direction of the first layer and has a depth from which the surface of the growth substrate is not exposed; a step (d) for growing a second layer that is formed of Alx2Gay2In1-x2-y2N (wherein 0 < x2 ≤ 1 and 0 ≤ y2 ≤ 1) on the first layer using at least the {1-101} plane as the crystal growth plane after the step (c); and a step (e) for growing an active layer on the second layer.