发明名称 APPARATUSES AND METHODS TO CONTROL BODY POTENTIAL IN MEMORY OPERATIONS
摘要 Some embodiments include apparatuses and methods having a memory cell string including memory cells located in different levels of the apparatus and a data line coupled to the memory cell string. The memory cell string includes a pillar body associated with the memory cells. At least one of such apparatus can include a module configured to store information in a memory cell among memory cells and/or to determine a value of information stored in a memory cell among memory cells. The module can also be configured to apply a voltage having a positive value to the data line and/or a source to control a potential of the body. Other embodiments are described.
申请公布号 US2015287472(A1) 申请公布日期 2015.10.08
申请号 US201514746416 申请日期 2015.06.22
申请人 Micron Technology, Inc. 发明人 Zhao Han;Goda Akira;Parat Krishna K.;Mauri Aurelio Giancarlo;Liu Haitao;Tanzawa Toru;Yamada Shigekazu;Sakui Koji
分类号 G11C16/32;G11C16/04 主分类号 G11C16/32
代理机构 代理人
主权项 1. An apparatus comprising: a memory cell string including memory cells located in different levels of the apparatus, the memory cell string including a body associated with the memory cells; a source coupled to the memory cell string; a data line coupled to the memory cell string; and a module configured to perform at least one of storing information in a memory cell among the memory cells and determining a value of information stored in a memory cell among the memory cells during a first time interval of the operation and to apply a voltage having a positive value to at least one of the source and the data line during a second time interval of the operation for controlling a potential of the body.
地址 Boise ID US