发明名称 |
Seed Crystal Substrates, Composite Substrates and Functional Devices |
摘要 |
A seed crystal substrate 8 includes a base body 1 and a plurality of rows of stripe-shaped seed crystal layers 3 formed on the base body 1. An upper face 3a of the seed crystal layer 3 is (11-22) plane, a groove 4 is formed between the adjacent seed crystal layers 3, and a longitudinal direction of the groove 4 is a direction in which a c-axis of a crystal forming the seed crystal layer is projected on the upper face. A nitride of a group 13 element is formed on the seed crystal substrate. |
申请公布号 |
US2015287884(A1) |
申请公布日期 |
2015.10.08 |
申请号 |
US201514742798 |
申请日期 |
2015.06.18 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
Higashihara Shuuhei;Iwai Makoto |
分类号 |
H01L33/32;H01L33/00;H01L33/20;H01L33/16 |
主分类号 |
H01L33/32 |
代理机构 |
|
代理人 |
|
主权项 |
1. A composite substrate comprising a seed crystal substrate and a layer of a crystal of a nitride of a group 13 element grown on said seed crystal substrate, said seed crystal substrate comprising a base body and a plurality of rows of stripe-shaped seed crystal layers formed on said base body:
wherein an upper face of said seed crystal layer is (11-22) plane; wherein a groove is formed between said seed crystal layers adjacent to each other, and; wherein a longitudinal direction of said groove is a direction in which a c-axis of a crystal forming said seed crystal layer is projected on said upper face. |
地址 |
Aichi-prefecture JP |