发明名称 Seed Crystal Substrates, Composite Substrates and Functional Devices
摘要 A seed crystal substrate 8 includes a base body 1 and a plurality of rows of stripe-shaped seed crystal layers 3 formed on the base body 1. An upper face 3a of the seed crystal layer 3 is (11-22) plane, a groove 4 is formed between the adjacent seed crystal layers 3, and a longitudinal direction of the groove 4 is a direction in which a c-axis of a crystal forming the seed crystal layer is projected on the upper face. A nitride of a group 13 element is formed on the seed crystal substrate.
申请公布号 US2015287884(A1) 申请公布日期 2015.10.08
申请号 US201514742798 申请日期 2015.06.18
申请人 NGK INSULATORS, LTD. 发明人 Higashihara Shuuhei;Iwai Makoto
分类号 H01L33/32;H01L33/00;H01L33/20;H01L33/16 主分类号 H01L33/32
代理机构 代理人
主权项 1. A composite substrate comprising a seed crystal substrate and a layer of a crystal of a nitride of a group 13 element grown on said seed crystal substrate, said seed crystal substrate comprising a base body and a plurality of rows of stripe-shaped seed crystal layers formed on said base body: wherein an upper face of said seed crystal layer is (11-22) plane; wherein a groove is formed between said seed crystal layers adjacent to each other, and; wherein a longitudinal direction of said groove is a direction in which a c-axis of a crystal forming said seed crystal layer is projected on said upper face.
地址 Aichi-prefecture JP