发明名称 MASK BLANK, METHOD FOR MANUFACTURING TRANSFER MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 This invention provides a mask blank that, despite containing a chromium-based light-blocking film, allows high transfer precision when using a hard-mask-film pattern as a mask. In said mask blank, a semi-light-transmitting film (2), a light-blocking film (3), and a hard-mask film (4) are layered on top of a light-transmitting substrate (1) in that order. The semi-light-transmitting film (2) contains silicon, and the hard-mask film (4) contains silicon and/or tantalum. The light-blocking film (3) has a layered structure consisting of a bottom layer (31) and a top layer (33) and contains chromium. The top layer (33) contains at least 65 at.% chromium and less than 20 at.% oxygen, and the bottom layer (31) contains less than 60 at.% chromium and at least 20 at.% oxygen.
申请公布号 WO2015152124(A1) 申请公布日期 2015.10.08
申请号 WO2015JP59855 申请日期 2015.03.30
申请人 HOYA CORPORATION 发明人 SHISHIDO, HIROAKI;NOZAWA, OSAMU
分类号 G03F1/32;G03F1/58;G03F1/80 主分类号 G03F1/32
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