| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a novel method capable of forming a uniform and good quality quantum dot.SOLUTION: A semiconductor quantum dot element manufacturing method comprises the steps of: forming, on a semiconductor substrate, a buffer layer laminated by crystal growth; and performing two-dimensional epitaxial growth at temperature Twhere a quantum dot layer is formed by self-organization growth, and subsequently performing three-dimensional epitaxial growth at temperature Tlower than the temperature T.</p> |
