NONVOLATILE MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME AND METHOD FOR DRIVING NONVOLATILE MEMORY DEVICE

摘要

A nonvolatile memory device can improve a read retry operation speed while minimizing a reduction in the capability of a memory read operation by performing a read retry operation. The nonvolatile memory device includes a resistive memory cell, a sensing node, and a sense amplifier connected to the sensing node and sensing a difference between a voltage level of the sensing node and a reference voltage level or a difference between a current level of the sensing node and a reference current level. When a read fail bit value is generated during a read operation of data stored in the resistive memory cell, a current flowing in the resistive memory cell is changed by changing a difference between voltages of opposite ends of the resistive memory cell and a read retry operation is then performed.

主权项

1. A nonvolatile memory device comprising:
a resistive memory cell; a sensing node; and a sense amplifier connected to the sensing node and configured to sense one of: a difference between a voltage level of the sensing node and a reference voltage level; and a difference between a current level of the sensing node and a reference current level, wherein when a read fail bit value is generated during a read operation of data stored in the resistive memory cell, a current flowing in the resistive memory cell is changed by changing a difference between voltages of opposite ends of the resistive memory cell, and a read retry operation is then performed.