| 发明名称 |
DEPOSITION SYSTEMS AND METHODS |
| 摘要 |
A system is disclosed, including a processing chamber for a deposition process; a cathode within the chamber, configured to introduce a sputter gas and a reactive gas adjacent to a target; a substrate holder, disposed opposite the cathode within the processing chamber, configured to secure a substrate to receive a deposition from the target; and a control system configured to monitor a target voltage and to control a flow rate of the reactive gas to maintain the target voltage within a desired range during the deposition process. Methods and devices for deposition processes are also disclosed. |
| 申请公布号 |
US2015284838(A1) |
申请公布日期 |
2015.10.08 |
| 申请号 |
US201514745246 |
申请日期 |
2015.06.19 |
| 申请人 |
FLIR Systems, Inc. |
发明人 |
Marx Tommy;Bornfreund Richard E.;Petraitis Yaroslava;Dale James L. |
| 分类号 |
C23C14/00;C23C14/08;H01J37/34;C23C14/34 |
主分类号 |
C23C14/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A system, comprising:
a processing chamber for a deposition process; a cathode within the chamber, configured to introduce a sputter gas and a reactive gas adjacent to a target; a substrate holder, disposed opposite the cathode within the processing chamber, configured to secure a substrate to receive a deposition from the target, wherein the substrate holder is electrically isolated from the processing chamber and surrounding shielding of the substrate holder; and a control system configured to monitor a target voltage and to control a flow rate of the reactive gas to maintain the target voltage within a desired range during the deposition process. |
| 地址 |
Wilsonville OR US |
