发明名称 |
METAL/CERAMIC BONDING SUBSTRATE AND METHOD FOR PRODUCING SAME |
摘要 |
After a wet blasting treatment for jetting a slurry, which contains spherical alumina as abrasive grains in a liquid, to the surface of a ceramic substrate 10 of aluminum nitride sintered body so that the ceramic substrate 10 has a residual stress of not higher than −50 MPa and so that the surface of the ceramic substrate 10 to be bonded to the metal plate 14 has an arithmetic average roughness Ra of 0.15 to 0.30 μm, a ten-point average roughness Rz of 0.7 to 1.1 μm and a maximum height Ry of 0.9 to 1.7 μm while causing the ceramic substrate to have a flexural strength of not higher than 500 MPa and causing the thickness of a residual stress layer 10a formed along the surface of the ceramic substrate 10 to be 25 μm or less, the metal plate 14 of copper or a copper alloy is bonded to the ceramic substrate 10, which is obtained by the wet blasting treatment, via a brazing filler metal 12 to produce a metal/ceramic bonding substrate which has an excellent bonding strength of the ceramic substrate 10 to the metal plate 14 and which has an excellent heat cycle resistance. |
申请公布号 |
US2015284296(A1) |
申请公布日期 |
2015.10.08 |
申请号 |
US201214443505 |
申请日期 |
2012.11.20 |
申请人 |
DOWA METALTECH CO., LTD. ;TOKUYAMA CORPORATION |
发明人 |
Osanai Hideyo;Kitamura Yukihiro;Aoki Hiroto;Kanechika Yukihiro;Sugawara Ken;Takeda Yasuko |
分类号 |
C04B37/02;B32B18/00;C04B35/581;B32B15/04;C04B41/91;B23K1/19 |
主分类号 |
C04B37/02 |
代理机构 |
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代理人 |
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主权项 |
1. A metal/ceramic bonding substrate comprising:
a ceramic substrate of aluminum nitride; and a metal plate bonded to the ceramic substrate, wherein the ceramic substrate has a residual stress of not higher than −50 MPa and wherein a bonded surface of the ceramic substrate to the metal plate has an arithmetic average roughness Ra of 0.15 to 0.30 μm. |
地址 |
Tokyo JP |