发明名称 METHODS OF FORMING AND ANALYZING DOPED SILICON
摘要 Methods of forming and analyzing doped monocrystalline silicon each comprise the steps of providing: a vessel, particulate silicon, a dopant, and a float-zone apparatus. The vessel for each method comprises silicon and defines a cavity. The methods each further comprise the steps of combining the particulate silicon and the dopant to form treated particulate silicon, and disposing the treated particulate silicon into the cavity of the vessel. The methods yet further comprise the step of float-zone processing the vessel and the treated particulate silicon into doped monocrystalline silicon with the float-zone apparatus. The analytical method further comprises the step of providing an instrument. The analytical method yet further comprises the steps of removing a piece from the doped monocrystalline silicon, and determining the concentration of the dopant in the piece with the instrument. The methods are useful for forming and analyzing monocrystalline silicon having various types and/or concentrations of dopant(s).
申请公布号 US2015284873(A1) 申请公布日期 2015.10.08
申请号 US201314441559 申请日期 2013.12.04
申请人 HEMLOCK SEMICONDUCTOR CORPORATION 发明人 Kreszowski Douglas Homer;Lanning Elizabeth
分类号 C30B13/10;G01N21/64;C30B29/06 主分类号 C30B13/10
代理机构 代理人
主权项 1. A method of forming doped monocrystalline silicon, comprising: providing a vessel comprising silicon and defining a cavity; providing particulate silicon; providing a dopant; providing a float-zone apparatus; combining the particulate silicon and the dopant to form treated particulate silicon; disposing the treated particulate silicon into the cavity of the vessel; and float-zone processing the vessel and the treated particulate silicon into the doped monocrystalline silicon with the float-zone apparatus.
地址 Hemlock MI US