发明名称 METHOD AND SYSTEM FOR REDUCING POLE IMBALANCE BY ADJUSTING EXPOSURE INTENSITY
摘要 A method and a system for adjusting exposure intensity to reduce unwanted lithographic effects are disclosed. In some exemplary embodiments, a photolithography method includes a step of receiving a mask and a workpiece. An orientation of an illumination pattern relative to the mask is determined, and an intensity profile of the illumination pattern is adjusted according to the orientation. The mask is exposed to radiation according to the illumination pattern and the intensity profile. The radiation resulted from the exposing of the mask is utilized to expose the workpiece. In the embodiments, the intensity profile includes an intensity that varies over an illuminating region of the illumination pattern.
申请公布号 KR20150113809(A) 申请公布日期 2015.10.08
申请号 KR20140192134 申请日期 2014.12.29
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LU YEN CHENG;YU SHINN SHENG;CHEN JENG HORNG;YEN ANTHONY
分类号 H01L21/027;G03F7/20;H01L21/033 主分类号 H01L21/027
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