| 摘要 |
PROBLEM TO BE SOLVED: To provide a monolith-integrated semiconductor optical element formed of a group IV semiconductor capable of causing a light-emitting element to emit light at high efficiency and allowing a light receiving element to receive light at high efficiency.SOLUTION: An n-type diffusion electrode and a p-type diffusion electrode are formed by performing doping after laminating an insulator film and a single crystal silicon formed over the insulator film. After forming a light-emitting layer with single crystal silicon so as to be conductive on both electrodes, a hard mask is deposited above the light-emitting layer and an ion implant layer is formed adjacent thereto. Subsequently, P ion (group IV element) is impregnated into the ion implant layer. After that, the ion implant layer is subjected to an annealing treatment to disperse the impregnated impurity in the light-emitting layer. Finally, a hard mask and the ion implant layer are removed by etching. |
