| 摘要 |
PROBLEM TO BE SOLVED: To improve electrical characteristics of a capacitive element.SOLUTION: A capacitive element CON forming a DRAM cell includes a lower electrode EL, a capacitive insulation film CINS formed on the lower electrode EL, and an upper electrode EU formed on the capacitive insulation film CINS. The upper electrode EU is structured by laminating a first upper electrode EU1, a second upper electrode EU2 and a third upper electrode EU3 in order from the side of the capacitive insulation film CINS. The third upper electrode EU3 is formed from a tungsten film containing impurities and between the first upper electrode EU1 and the third upper electrode EU3, the second upper electrode EU2 is interposed that is a barrier film for preventing the impurities in the third upper electrode EU3 from being diffused over the capacitive insulation film CINS. |
