SEMICONDUCTOR DEVICE, DISPLAY DEVICE HAVING SEMICONDUCTOR DEVICE, DISPLAY MODULE HAVING DISPLAY DEVICE AND ELECTRONIC APPARATUS HAVING SEMICONDUCTOR DEVICE, DISPLAY DEVICE AND DISPLAY MODULE

摘要

PROBLEM TO BE SOLVED: To inhibit variation in electric characteristics and improve reliability in a semiconductor device using a transistor having an oxide semiconductor.SOLUTION: In a semiconductor device having a transistor, the transistor has a gate electrode, a first insulation film on the gate electrode, a second insulation film on the first insulation film, an oxide semiconductor film on the second insulation film, a source electrode electrically connected to the oxide semiconductor film, and a drain electrode electrically connected to the oxide semiconductor film. The semiconductor device includes a third insulation film provided on the transistor and a fourth insulation film provided on the third insulation film. The third insulation film contains oxygen and the fourth insulation film contains nitrogen. Molecular emissions of oxygen of the third insulation film in thermal desorption spectroscopy is equal to or more than 1×10pcs/cm. Molecular emissions of oxygen of the fourth insulation film in thermal desorption spectroscopy is less than 1×10pcs/cm.