发明名称 |
SOLID STATE PHOTO MULTIPLIER DEVICE |
摘要 |
A method and an apparatus for detecting photons are disclosed. The apparatus includes a solid state photo multiplier device having a plurality of microcells that have a band gap greater than about 1.7 eV at 25° C. The solid state photo multiplier device further includes an integrated quenching device and a thin film coating associated with each of the microcells. The solid state photo multiplier device disclosed herein operates in a temperature range of about −40° C. to about 275° C. |
申请公布号 |
US2015285942(A1) |
申请公布日期 |
2015.10.08 |
申请号 |
US201414244979 |
申请日期 |
2014.04.04 |
申请人 |
General Electric Company |
发明人 |
Soloviev Stanislav Ivanovich;Sandvik Peter Micah;Dolinsky Sergei Ivanovich;Chen Cheng-Po;Climent Helene Claire;Palit Sabarni |
分类号 |
G01V5/08;E21B47/00 |
主分类号 |
G01V5/08 |
代理机构 |
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代理人 |
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主权项 |
1. A method of detecting a high energy radiation in a down-hole drilling application, the method comprising:
detecting the high energy radiation by producing photons in a scintillator exposed to the high energy radiation; detecting the photons by a solid state photo multiplier device at a temperature greater than about 175° C.; and processing the detected photons at a temperature greater than 175° C. using an associated electronics producing signals corresponding to the detected photons, wherein the solid state photo multiplier device comprises: a plurality of microcells having a bandgap greater than about 1.7 eV at 25° C.; an integrated quenching device associated with each of the individual microcells; and a thin film coating on a semiconductor surface of each microcell. |
地址 |
Schenectady NY US |