发明名称 SOLID STATE PHOTO MULTIPLIER DEVICE
摘要 A method and an apparatus for detecting photons are disclosed. The apparatus includes a solid state photo multiplier device having a plurality of microcells that have a band gap greater than about 1.7 eV at 25° C. The solid state photo multiplier device further includes an integrated quenching device and a thin film coating associated with each of the microcells. The solid state photo multiplier device disclosed herein operates in a temperature range of about −40° C. to about 275° C.
申请公布号 US2015285942(A1) 申请公布日期 2015.10.08
申请号 US201414244979 申请日期 2014.04.04
申请人 General Electric Company 发明人 Soloviev Stanislav Ivanovich;Sandvik Peter Micah;Dolinsky Sergei Ivanovich;Chen Cheng-Po;Climent Helene Claire;Palit Sabarni
分类号 G01V5/08;E21B47/00 主分类号 G01V5/08
代理机构 代理人
主权项 1. A method of detecting a high energy radiation in a down-hole drilling application, the method comprising: detecting the high energy radiation by producing photons in a scintillator exposed to the high energy radiation; detecting the photons by a solid state photo multiplier device at a temperature greater than about 175° C.; and processing the detected photons at a temperature greater than 175° C. using an associated electronics producing signals corresponding to the detected photons, wherein the solid state photo multiplier device comprises: a plurality of microcells having a bandgap greater than about 1.7 eV at 25° C.; an integrated quenching device associated with each of the individual microcells; and a thin film coating on a semiconductor surface of each microcell.
地址 Schenectady NY US