| 摘要 |
The present invention relates to a method for producing a transparent conductive film having an ITO transparent electrode layer. A winding-type sputter film deposition device (200) comprises at least three film deposition chambers (201, 202, 203, 204) adjacent to a film deposition roll (256). While a transparent film substrate (10) is being conveyed on the film deposition roll (256), a base conductive layer (21) having a film thickness of 0.5 to 4 nm is formed by sputtering in one or more film deposition chambers, and a main conductive layer (25) having a total film thickness of 8 to 25 nm is formed thereon by successive sputtering in two or more film deposition chambers. The applied electricity in the film deposition chambers where the base conductive layer (21) is formed is 5 to 20% of the total of the applied electricity in each film deposition chamber where the base conductive layer (21) and main conductive layer (25) are formed. Preferably the main conductive layer is formed using an applied electricity in the film deposition chamber where the ITO thin film is first deposited that is less than the applied electricity in the film deposition chambers where the ITO thin film is deposited next. |
