| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory that can cause a generation voltage of a voltage generation circuit to rapidly reach a desired voltage value from when starting operation of the voltage generation circuit with a downsized configuration and at low power consumption.SOLUTION: A semiconductor memory comprises: a first transistor Q1 that has a first terminal receiving first potential, a second terminal connected to a first line EN, and a control terminal receiving a control signal CE; a second transistor Q2 that has the first terminal connected to the first line, has second potential applied to the second terminal, and has the control terminal connected to a voltage supply line RL; a third transistor Q3 which has the first potential applied to the first terminal, and has a signal causing a logical level of the control signal to be inverted input into the control terminal; and a fourth transistor Q4 that has the first terminal connected to a second terminal of the third transistor, has the second terminal connected to the voltage supply line, and has the control terminal connected to the first line. |
