| 发明名称 |
POWER DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A power device having fast switching characteristic, while keeping EMI noise to a minimum and a method of fabricating the same are provided. The power device includes a first field stop layer having a first conductivity type, a first drift region formed on the first field stop layer and having a first conductivity type in an impurity concentration that is lower than the first field stop layer, a buried region formed on the first drift region and having the first conductivity type in an impurity concentration that is higher than the first drift region, a second drift region formed on the buried region, a power device cell formed at an upper portion of the second drift region, and a collector region formed below the first field stop layer. |
| 申请公布号 |
US2015287786(A1) |
申请公布日期 |
2015.10.08 |
| 申请号 |
US201514742328 |
申请日期 |
2015.06.17 |
| 申请人 |
FAIRCHILD KOREA SEMICONDUCTOR LTD. |
发明人 |
JEON Jae-duck;KIM Young-chul;PARK Kyeong-seok;KIM Jin-myung;CHOI Young-chul |
| 分类号 |
H01L29/10;H01L29/66;H01L29/739;H01L21/265;H01L29/36;H01L29/06;H01L21/304 |
主分类号 |
H01L29/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A power device, comprising:
a field stop layer having a first conductivity type; a first drift region disposed on the field stop layer and having the first conductivity type in an impurity concentration that is lower than the field stop layer; a buried region disposed on the first drift region and having the first conductivity type in an impurity concentration that is higher than the first drift region; a second drift region disposed on the buried region; a power device cell disposed at an upper portion of the second drift region; and a collector region disposed below the field stop layer. |
| 地址 |
Bucheon-si KR |
