| 摘要 |
A wide bandgap insulated gate semiconductor device includes a semiconductor substrate made of semiconductor having a bandgap wider than silicon; n− drift layer over the semiconductor substrate; p-channel regions selectively disposed over the drift layer; n+ semiconductor regions selectively disposed in respective surfaces in the channel regions; a plurality of p+ base regions in contact with bottoms of the respective channel regions; a protruding drift layer portion that is n-type region interposed between the p-channel regions and the p+ base regions thereunder; a gate electrode formed, through a gate insulating film, on the protruding drift layer portion and on respective surfaces of the p-channel regions; a source electrode in contact with the n+ semiconductor regions in the channel regions; and a p+ floating region inside the protruding drift layer portion, having side faces respectively facing side faces of the second conductivity type base regions, wherein respective gaps between the p+ base regions and the p+ floating region defined by the respective side faces have a wide portion and a narrow portion. |
