SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

A semiconductor device with a nonvolatile memory is provided which has improved characteristics. The semiconductor device includes a control gate electrode, a memory gate electrode disposed adjacent to the control gate electrode, a first insulating film, and a second insulating film including therein a charge storing portion. Among these components, the memory gate electrode is formed of a silicon film including a first silicon region positioned over the second insulating film,. and a second silicon region positioned above the first silicon region. The second silicon region contains p-type impurities, and the concentration of p-type impurities of the first silicon region is lower than that of the p-type impurities of the second silicon region.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a first gate electrode disposed over the semiconductor substrate; a second gate electrode disposed over the semiconductor substrate so as to be adjacent to the first gate electrode; a first insulating film formed between the first gate electrode and the semiconductor substrate; and a second insulating film formed between the second gate electrode and the semiconductor substrate, and between the first gate electrode and the second gate electrode, said second insulating film including therein a charge storing portion, wherein the second gate electrode includes: a first silicon region positioned over the second insulating film; and a second silicon region positioned over the first silicon region, wherein the second silicon region contains p-type impurities, and wherein a concentration of the p-type impurities of the first silicon region is lower than that of the p-type impurities of the second silicon region.