SEMICONDUCTOR DEVICE INCLUDING A BUFFER LAYER STRUCTURE FOR REDUCING STRESS

摘要

A semiconductor device includes a semiconductor chip, wiring that is included in the semiconductor chip and has a coupling part between parts with different widths, a pad being formed above the wiring and in a position overlapping the coupling part, a bump being formed on the pad, a buffer layer being formed in a position between the coupling part and the pad so as to cover the entire couple part, and inorganic insulating layers being formed between the wiring and the buffer layer and between the buffer layer and the pad, respectively. The buffer layer is made of a material other than resin and softer than the inorganic insulating layer.

主权项

1. A semiconductor device comprising:
a semiconductor chip having a laminating structure, and a pad; a wiring that is included in the semiconductor chip, the wiring having a first wiring part and a second wiring part, a first width of the first wiring part being different from a second width of the second wiring part, the wiring has a coupling part between the first wiring part and the second wiring part; a buffer layer that is formed in a position between the coupling part and the pad; a contact part for making contact with a diffusion layer and the wiring; wherein, when the laminating structure is viewed with the semiconductor device oriented with the pad at the top portion, the pad is disposed above the coupling part, the diffusion layer is formed below the wiring, and the buffer layer is arranged in overlapping relation with the pad, coupling part, the contact part and the diffusion layer in a plan view from above the pad.