| 发明名称 |
HIGH-FREQUENCY INTEGRATED DEVICE WITH AN ENHANCED INDUCTANCE AND A PROCESS THEREOF |
| 摘要 |
The present invention provides a high-frequency integrated device, comprising a substrate including at least an on-chip active and passive member and a ferrite layer bonded to the substrate through an interfacial bridge and substantially wrapping plurality of surfaces of said at least on-chip active and passive members. The present invention also provides a system incorporating the high-frequency integrated device of the present invention. The present invention further provides a process for the preparation of the high-frequency integrated device. |
| 申请公布号 |
US2015287658(A1) |
申请公布日期 |
2015.10.08 |
| 申请号 |
US201314441329 |
申请日期 |
2013.10.30 |
| 申请人 |
INDIAN INSTITUTE OF SCIENCE |
发明人 |
Sai Ranajit;Shivshankar Srinivasarao Ajjampur;Bhat Navakanta;Kalarickaparambil Joseph Vinoy |
| 分类号 |
H01L23/29;H01L21/56;H01L23/66 |
主分类号 |
H01L23/29 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A high-frequency integrated device, comprising:
(a) a substrate including at least an on-chip active and passive member; and (b) a ferrite layer bonded to said substrate through an interfacial bridge and substantially wrapping plurality of surfaces of said at least on-chip active and passive members. |
| 地址 |
Bangalore IN |
