发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
A semiconductor device manufacturing method for a semiconductor device having a p-n junction formed of a first conductivity type first semiconductor region and a second conductivity type second semiconductor region, and comprising a low-lifetime region that has a carrier lifetime shorter than that in other regions at the interface of the p-n junction. The method includes an implantation process of, after implanting a second conductivity type impurity into the surface of the first semiconductor region with a first acceleration energy, implanting a second conductivity type impurity, with a second acceleration energy differing from the first acceleration energy, into the surface of the first semiconductor region into which the second conductivity type impurity has been implanted. |
申请公布号 |
US2015287601(A1) |
申请公布日期 |
2015.10.08 |
申请号 |
US201514746452 |
申请日期 |
2015.06.22 |
申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
LU HONG-FEI |
分类号 |
H01L21/265;H01L29/167;H01L29/36;H01L21/268 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device manufacturing method for manufacturing a semiconductor device having a p-n junction formed of a first conductivity type first semiconductor region and a second conductivity type second semiconductor region, and comprising a low-lifetime region that has a carrier lifetime shorter than that in other regions at the interface of the p-n junction, the method comprising:
an implantation process of, after implanting a second conductivity type impurity into the surface of the first semiconductor region with a first acceleration energy, implanting a second conductivity type impurity, with a second acceleration energy differing from the first acceleration energy, into the surface of the first semiconductor region into which the second conductivity type impurity has been implanted. |
地址 |
Kawasaki JP |