发明名称 |
DEVICES AND METHODS OF FORMING FINS AT TIGHT FIN PITCHES |
摘要 |
Devices and methods for forming semiconductor devices with fins at tight fin pitches are provided. One method includes, for instance: obtaining an intermediate semiconductor device; growing an epi layer over the substrate; forming a doped layer below the epi layer; depositing a first oxide layer on the epi layer; applying a dielectric material on the first oxide layer; and depositing a lithography stack on the dielectric material. One intermediate semiconductor device includes, for instance: a substrate with at least one n-well region and at least one p-well region; a doped layer over the substrate; an epi layer over the doped layer; a first oxide layer over the epi layer; a dielectric layer over the first oxide layer; and a lithography stack over the dielectric layer. |
申请公布号 |
US2015287595(A1) |
申请公布日期 |
2015.10.08 |
申请号 |
US201514725430 |
申请日期 |
2015.05.29 |
申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
WEI Andy;HARIHARAPUTHIRAN Mariappan;YANG Dae Geun;CHOI Dae-Han;HU Xiang;CARTER Richard J.;SEHGAL Akshey |
分类号 |
H01L21/033;H01L29/78;H01L21/027 |
主分类号 |
H01L21/033 |
代理机构 |
|
代理人 |
|
主权项 |
1. An intermediate semiconductor device comprising:
a substrate with at least one n-well region and at least one p-well region; a doped layer over the substrate; an epi layer over the doped layer; a first oxide layer over the epi layer; a dielectric layer over the first oxide layer; and a lithography stack over the dielectric layer. |
地址 |
Grand Cayman KY |