发明名称 Charged Particle Beam Device and Overlay Misalignment Measurement Method
摘要 An overlay misalignment amount of patterns on different layers can be accurately measured. To achieve this, a charged particle beam device includes: a charged particle beam source irradiating a sample with a charged particle beam under one irradiation condition; a first detector that detects a signal generated front a first pattern formed on a first layer in an irradiation region; a second detector that detects a signal generated from a second pattern formed on a second layer in the irradiation region at a same time as the first detector; and an image processing unit that calculates an overlay misalignment amount between the first pattern and the second pattern based on a first detection signal and a second detection signal output by the first detector and the second detector, respectively.
申请公布号 US2015287569(A1) 申请公布日期 2015.10.08
申请号 US201314435203 申请日期 2013.10.23
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 Yamamoto Takuma;Funakoshi Tomohiro;Tanimoto Kenji
分类号 H01J37/22;H01J37/28;G01B15/00 主分类号 H01J37/22
代理机构 代理人
主权项 1. A charged particle beam device comprising: a charged particle beam source that irradiates a sample with a charged particle beam under one irradiation condition; a first detector that detects a signal generated from a first pattern formed on a first layer in a measurement region; a second detector that detects a signal generated from a second pattern formed on a second layer in the measurement region at a same time as the first detector; and an image processing unit that measures an overlay misalignment amount between the first pattern and the second pattern based on a first detection signal and a second detection signal output by the first detector and the second detector, respectively.
地址 Tokyo JP