发明名称 |
Charged Particle Beam Device and Overlay Misalignment Measurement Method |
摘要 |
An overlay misalignment amount of patterns on different layers can be accurately measured. To achieve this, a charged particle beam device includes: a charged particle beam source irradiating a sample with a charged particle beam under one irradiation condition; a first detector that detects a signal generated front a first pattern formed on a first layer in an irradiation region; a second detector that detects a signal generated from a second pattern formed on a second layer in the irradiation region at a same time as the first detector; and an image processing unit that calculates an overlay misalignment amount between the first pattern and the second pattern based on a first detection signal and a second detection signal output by the first detector and the second detector, respectively. |
申请公布号 |
US2015287569(A1) |
申请公布日期 |
2015.10.08 |
申请号 |
US201314435203 |
申请日期 |
2013.10.23 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
Yamamoto Takuma;Funakoshi Tomohiro;Tanimoto Kenji |
分类号 |
H01J37/22;H01J37/28;G01B15/00 |
主分类号 |
H01J37/22 |
代理机构 |
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代理人 |
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主权项 |
1. A charged particle beam device comprising:
a charged particle beam source that irradiates a sample with a charged particle beam under one irradiation condition; a first detector that detects a signal generated from a first pattern formed on a first layer in a measurement region; a second detector that detects a signal generated from a second pattern formed on a second layer in the measurement region at a same time as the first detector; and an image processing unit that measures an overlay misalignment amount between the first pattern and the second pattern based on a first detection signal and a second detection signal output by the first detector and the second detector, respectively. |
地址 |
Tokyo JP |