发明名称 Single-Junction Voltage Reference
摘要 A single semiconductor-based junction may be used to create a voltage reference, and temperature compensate the voltage reference, by time-multiplexing the voltage reference between different current drive levels. That is, the value of the current driven through the single junction may be repeatedly varied in a recurring manner. In case the junction is a zener diode, the current may be repeatedly switched between forward and reverse directions. As long as the temperature coefficients (in ppm/° C.) of the different voltages developed responsive to the different currents across the junction are different, a weighting of the different voltage values yield a zero temperature coefficient voltage reference value. To implement a bandgap reference, a single diode-connected bipolar junction transistor may alternately be forward-biased using a first current and at least a second current. A weighting of the (at least) two resulting Vbe (base-emitter voltage) drops may yield a zero temperature coefficient bandgap voltage.
申请公布号 US2015286239(A1) 申请公布日期 2015.10.08
申请号 US201414245693 申请日期 2014.04.04
申请人 NATIONAL INSTRUMENTS CORPORATION 发明人 Regier Christopher G.
分类号 G05F3/20;G01R19/00 主分类号 G05F3/20
代理机构 代理人
主权项 1. A method for implementing a temperature compensated reference voltage using a single semiconductor junction, the method comprising: obtaining a set of voltage values, comprising obtaining one or more first voltage values and one or more second voltage values, wherein each of the one or more first voltage values is representative of a first voltage developed across a single semiconductor junction (SSJ), and each of the one or more second voltage values is representative of a second voltage developed across the SSJ, said obtaining comprising alternately applying: a first current to the SSJ to develop the first voltage; anda second current to the SSJ to develop the second voltage; varying a temperature of the SSJ over a temperature range during said obtaining the set of voltage values; and determining one or more parameters based on the one or more first voltage values and the one or more second voltage values, wherein the one or more parameters are parameters of a function of the first voltage and the second voltage, wherein the function yields a temperature compensated voltage value of a reference voltage derived from the SSJ.
地址 Austin TX US