METHOD FOR FORMING SILICON OXIDE FILM, AND DEVICE FOR FORMING SILICON OXIDE FILM

摘要

PROBLEM TO BE SOLVED: To provide: a method for forming a silicon oxide film which enables the suppression of occurrence of a void or seam; and a device for forming a silicon oxide film.SOLUTION: A method for forming a silicon oxide film comprises: a silicon film formation step of forming a silicon film 55 in a groove 53 of a semiconductor wafer W; an etching step of etching the silicon film 55; an oxidation step of oxidizing the etched silicon film 55, thereby forming a silicon oxide film; and a filling step of forming a silicon oxide film so that it covers the silicon oxide film formed in the oxidation step and fills the groove 53 of the semiconductor wafer.