THIN FILM TRANSISTOR, THIN FILM TRANSISTOR PANEL, AND METHOD FOR MANUFACTURING THE SAME

摘要

A Thin Film Transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate a first source electrode and a first drain electrode spaced apart from each other on the semiconductor layer, a channel area disposed in the semiconductor layer between the first source electrode and the first drain electrode, an etching prevention layer disposed on the channel area, the first source electrode, and the first drain electrode and a second source electrode in contact with the first source electrode, and a second drain electrode in contact with the first drain electrode.

主权项

1. A Thin Film Transistor (TFT) comprising:
a substrate; a semiconductor layer disposed on the substrate; a first source electrode and a first drain electrode spaced apart from each other on the semiconductor layer; a channel area disposed in the semiconductor layer between the first source electrode and the first drain electrode; an etching prevention layer disposed on the channel area, the first source electrode, and the first drain electrode; a second source electrode in contact with the first source electrode, and a second drain electrode in contact with the first drain electrode; a protection film disposed on the second source electrode and the second drain electrode and having a contact hole formed in the protection film exposing the second drain electrode; and a pixel electrode disposed on the protection film and electrically connected to the second drain electrode through the contact hole, wherein the etching prevention layer overlaps the contact hole.