SEMICONDUCTOR DEVICE, MODULE, AND ELECTRONIC DEVICE

摘要

A transistor with favorable electrical characteristics is provided. A transistor with stable electrical characteristics is provided. A transistor having a low off-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device includes a first conductor, a second conductor, a third conductor, an oxide semiconductor, and an insulator. The oxide semiconductor includes a first region, a second region, and a third region. The oxide semiconductor overlaps with the first conductor with the insulator therebetween in the first region. The oxide semiconductor is in contact with the second conductor in the second region. The oxide semiconductor is in contact with the third conductor in the third region. The oxide semiconductor includes a fourth region having a single crystal structure. The fourth region includes the first region.

主权项

1. A semiconductor device comprising:
a first conductor; a second conductor; a third conductor; an oxide semiconductor including a first region, a second region, and a third region; and an insulator, wherein the first region overlaps the first conductor with the insulator therebetween, wherein the second region is in contact with the second conductor, wherein the third region is in contact with the third conductor, and wherein the first region has a single crystal structure.