发明名称 |
NON-VOLATILE MEMORY DEVICE, MEMORY SYSTEM, AND METHOD OF OPERATING THE NON-VOLATILE MEMORY DEVICE |
摘要 |
Provided are a non-volatile memory device, a memory system, and a method of operating the non-volatile memory device. The method includes: performing a user operation according to at least one mode selected from among a writing mode, a reading mode, and an erasing mode with respect to a memory cell array; setting up voltages of a plurality of word lines; floating at least one word line from among the plurality of word lines, the voltages of which are set up, according to the at least one selected mode; and detecting whether the at least one word line has a progressive defect, according to a result of detecting a voltage level of the at least one floated word line. |
申请公布号 |
US2015287479(A1) |
申请公布日期 |
2015.10.08 |
申请号 |
US201514616281 |
申请日期 |
2015.02.06 |
申请人 |
NAM Sang-wan;JEON Byung-gil;BYEON Dae-seok |
发明人 |
NAM Sang-wan;JEON Byung-gil;BYEON Dae-seok |
分类号 |
G11C29/38;G11C29/12 |
主分类号 |
G11C29/38 |
代理机构 |
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代理人 |
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主权项 |
1. A method of operating a non-volatile memory device, the method comprising:
performing a user operation according to at least one mode selected from among a writing mode, a reading mode, and an erasing mode with respect to a memory cell array; setting up voltages of a plurality of word lines; floating at least one word line from among the plurality of word lines, the voltages of which are set up, according to the at least one selected mode; and detecting whether the at least one word line has a progressive defect, according to a result of detecting a voltage level of the at least one floated word line. |
地址 |
Hwaseong-si KR |