发明名称 NON-VOLATILE MEMORY DEVICE, MEMORY SYSTEM, AND METHOD OF OPERATING THE NON-VOLATILE MEMORY DEVICE
摘要 Provided are a non-volatile memory device, a memory system, and a method of operating the non-volatile memory device. The method includes: performing a user operation according to at least one mode selected from among a writing mode, a reading mode, and an erasing mode with respect to a memory cell array; setting up voltages of a plurality of word lines; floating at least one word line from among the plurality of word lines, the voltages of which are set up, according to the at least one selected mode; and detecting whether the at least one word line has a progressive defect, according to a result of detecting a voltage level of the at least one floated word line.
申请公布号 US2015287479(A1) 申请公布日期 2015.10.08
申请号 US201514616281 申请日期 2015.02.06
申请人 NAM Sang-wan;JEON Byung-gil;BYEON Dae-seok 发明人 NAM Sang-wan;JEON Byung-gil;BYEON Dae-seok
分类号 G11C29/38;G11C29/12 主分类号 G11C29/38
代理机构 代理人
主权项 1. A method of operating a non-volatile memory device, the method comprising: performing a user operation according to at least one mode selected from among a writing mode, a reading mode, and an erasing mode with respect to a memory cell array; setting up voltages of a plurality of word lines; floating at least one word line from among the plurality of word lines, the voltages of which are set up, according to the at least one selected mode; and detecting whether the at least one word line has a progressive defect, according to a result of detecting a voltage level of the at least one floated word line.
地址 Hwaseong-si KR