| 发明名称 |
SEMICONDUCTOR DEVICE HAVING INTERNAL VOLTAGE GENERATING CIRCUIT |
| 摘要 |
A semiconductor device including a first internal voltage generating circuit that includes a capacitor including a first electrode and a second electrode, and the first internal voltage generating circuit to generate an internal voltage by charging the capacitor to a first voltage and applying a second voltage to the first electrode of the capacitor to generate a third voltage that is greater than the first and the second voltages on the second electrode in absolute value, and a control circuit to perform a control by applying a fourth voltage that is less than the first voltage to the capacitor when the first internal voltage generating circuit is in a standby state. |
| 申请公布号 |
US2015286229(A1) |
申请公布日期 |
2015.10.08 |
| 申请号 |
US201514664128 |
申请日期 |
2015.03.20 |
| 申请人 |
PS4 LUXCO S.A.R.L. |
发明人 |
Hayashi Koichiro |
| 分类号 |
G05F1/46;H02M3/07 |
主分类号 |
G05F1/46 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first internal voltage generating circuit that includes a capacitor including a first electrode and a second electrode, and the first internal voltage generating circuit to generate an internal voltage by charging the capacitor to a first voltage and applying a second voltage to the first electrode of the capacitor to generate a third voltage that is greater than the first and the second voltages on the second electrode in absolute value; and a control circuit to perform a control by applying a fourth voltage that is less than the first voltage to the capacitor when the first internal voltage generating circuit is in a standby state. |
| 地址 |
Luxembourg LU |
