Halbleiterschichtenfolge und Verfahren zur Herstellung einer Halbleiterschichtenfolge

摘要

The invention relates to a semiconductor layer sequence, comprising: a first nitridic compound semiconductor layer, a second nitridic compound semiconductor layer, and an intermediate layer arranged between the first and second nitridic compound semiconductor layers; wherein, beginning with the first nitridic compound semiconductor layer, the intermediate layer and the second nitridic compound semiconductor layer are arranged one after the other in a direction of growth of the semiconductor layer sequence and are adjacent to each other in direct succession; wherein the intermediate layer has a lattice constant different from the lattice constant of the first nitridic compound semiconductor layer at least at some points; and wherein the second nitridic compound semiconductor layer is lattice-adapted to the intermediate layer at least at some points.