| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a compound semiconductor device capable of sufficiently suppressing current collapse, and to provide a method of manufacturing the same. <P>SOLUTION: A compound semiconductor device includes: a substrate 1; a compound semiconductor stacked structure 2 formed on the substrate 1; a gate electrode 3 formed on the compound semiconductor stacked structure 2; and two ohmic electrodes 4a and 4b sandwiching the gate electrode 3 therebetween in a plan view. The compound semiconductor device further includes a field plate 6 that is provided above the gate electrode 3 and is insulatedly separated from the gate electrode 3 and the ohmic electrodes 4a and 4b. At least one end of the field plate 6 in a direction connecting the ohmic electrodes 4a and 4b to each other is located between the ohmic electrodes 4a and 4b and the gate electrode 3 in a plan view. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
