MAGNETORESISTIVE RANDOM ACCESS MEMORY FOR ADJUSTING CURRENT AND METHOD OF OPERATING THE SAME

摘要

Disclosed are a magnetoresistive memory device capable of improving cycling endurance, and a method for operating the same. The magnetoresistive memory device comprises: a memory cell having an MTJ device connected between a bit line and a source line, and a first transistor; and an electric current amount adjusting unit for adjusting the magnitude of an electric current flowing toward the source line from the bit line or an electric current flowing toward the bit line from the source line, in the direction of an electric current flowing through the memory cell between the bit line and the source line during a writing operation or reading operation.