| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent deterioration of the static noise margin of memory cells. <P>SOLUTION: A semiconductor memory comprises: real memory cells each having a latch that stores data and a real transfer transistor that is connected to an input/output node of the latch; bit lines each being connected to the input/output node through the real transfer transistor; word lines each being connected to the gate of the real transfer transistor; and precharge circuits precharging the bit lines. The precharge circuits each comprises a replica memory cell having the same structure as the real memory cell, which includes a replica transfer transistor that, at least when the real memory cells are not accessed, receives by its gate a first high-level voltage that is the same as a high-level voltage on a word line, receives by its drain a second high-level voltage, and supplies to a bit line a precharge voltage that is generated at its source. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
