| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device of a structure which can reduce the number of processes and improve productivity, and to provide a manufacturing method of the same. <P>SOLUTION: A semiconductor device manufacturing method comprises: a step of forming a trench 2 on a semiconductor layer 1; a step of forming an insulation film 3 on the semiconductor layer 1 so as to cover an inside wall of a trench 2 and a surface outside the trench 2; a step of forming a conductive polysilicon film 4 so as to fully fill the trench 2 and be deposited on the insulation film 3 outside the trench 2; and a polysilicon etching step of selectively removing the polysilicon film 4 so as to leave the polysilicon film 4 inside the trench 2 and in a predetermined region on the insulation film 3 outside the trench 2. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
