发明名称 |
Iii-nitride bidirectional switches |
摘要 |
<p>Bidirectional switches are described. The bidirectional switches include first and a second III-N based high electron mobility transistor. In some embodiments, the source of the first transistor is in electrical contact with a source of the second transistor. In some embodiments, the drain of the first transistor is in electrical contact with a drain of the second transistor. In some embodiments, the two transistors share a drift region and the switch is free of a drain contact between the two transistors. Matrix converters can be formed from the bidirectional switches.</p> |
申请公布号 |
EP2887402(A3) |
申请公布日期 |
2015.10.07 |
申请号 |
EP20150153536 |
申请日期 |
2008.09.12 |
申请人 |
TRANSPHORM INC. |
发明人 |
HONEA, JAMES;PARIKH, PRIMIT;WU, YIFENG;BEN-YAACOV, ILAN |
分类号 |
H01L29/78;H01L27/06;H01L29/10;H01L29/20;H01L29/40;H01L29/423;H01L29/778;H01L29/80 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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