| 摘要 |
PURPOSE:To cover the substrate with metal carbide or carbonitride without transforming or degenerating the substrate at a comparative low temperature, by applying voltage between reduced pressure reaction room and heated substrate charged in the room and carrying out chemical reaction introducing reaction gas under the above condition. CONSTITUTION:On occasion of covering the surface of the substrate 4 by TiC thin film, generated TiCl gas fromthe vessel 1 is supplied together with C2H2 as C source and H2 gas to the reaction room 3. On this occasion, Ar gas, N2 gas etc. are added on occasion demands. On the one hand, pressure of the reaction gas in the room 3 is maintained at 0.05-10 torr. Then, plasma is made by the above gas and the gas is activated by the discharge in the room 3 and covering layer of TiC is formed on the surface of the substrate 4 put in the room 3 as cathode. Further, voltage of 200V-8kV is applied between the room (anode) 3 and the substrate (cathode) 4 and also, temperature of the substrate 4 is set up at 100-1000 deg.C. Moreover, one kind compound of metal of Si, B and 4a, 5a, 6a group, is used for the above mentioned raw material. |
