| 摘要 |
<p>A laser processing method in which a pulse laser having a prescribed beam cross-sectional shape is scanned over a non-monocrystalline semiconductor film and overlap-irradiated at a prescribed scanning pitch to create a crystalline semiconductor film, in order to reduce the adverse impact of rising sections formed in the semiconductor film as a result of overlap irradiation by the pulse laser. In said laser processing method, the rising sections are formed close together, the height differences between the rising sections are reduced, and irradiation unevenness is reduced, as a result of setting the scanning pitch within a range fulfilling formula 0.75b≥p≥0.25b, and performing pulse laser overlap irradiation by irradiating the pulse laser upon the semiconductor film, when: b is the length in the scanning direction in the bottom side of the rising sections formed in the rear end side of the scanning direction of the pulse laser beam irradiated upon the semiconductor film; and p is the scanning pitch.</p> |
