发明名称 |
AN INTEGRATED CIRCUIT HAVING IMPROVED RADIATION IMMUNITY |
摘要 |
<p>An integrated circuit having improved radiation immunity is described. The integrated circuit comprises a substrate; a P-well formed on the substrate and having N-type transistors of a memory cell; and an N-well formed on the substrate and having P-type transistors of the memory cell; wherein the N-well has minimal dimensions for accommodating the P-type transistors.</p> |
申请公布号 |
EP2926373(A1) |
申请公布日期 |
2015.10.07 |
申请号 |
EP20130811663 |
申请日期 |
2013.11.25 |
申请人 |
XILINX, INC. |
发明人 |
JAIN, PRAFUL;KARP, JAMES;HART, MICHAEL, J. |
分类号 |
H01L27/02;G11C11/412;H01L27/11 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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