| 摘要 |
<p>A frequency converter, capable of obtaining resonance characteristics having a high Q factor and a high multiplication signal and having a narrow-band frequency selectivity function, is provided by the following configuration. A magnetoresistance effect element includes a pinned magnetization layer, a free magnetization layer, and a non-magnetic spacer layer disposed between the pinned magnetization layer and the free magnetization layer. In response to an input of a high frequency signal and a local signal, the magnetoresistance effect element generates a voltage signal (multiplication signal) by multiplying the signals by each other using a magnetoresistance effect. A magnetic field generated by a magnetic-field applying unit is applied to the free magnetization layer of the magnetoresistance effect element in a direction perpendicular to a film surface direction or by tilting an angle of the magnetic field from the film surface direction toward a direction perpendicular to the film surface direction.</p> |
