发明名称 |
METHOD FOR FABRICATING BACKSIDE-ILLUMINATED SENSORS |
摘要 |
A method for fabricating a backside-illuminated sensor includes providing a thin film semiconductor lamina having a first conductivity, and forming a doped region having a second conductivity within the lamina and at a front surface of the lamina. The lamina may be provided as a free-standing lamina, or may be provided as a semiconductor donor body from which the lamina is cleaved. An electrical connection is formed to the doped region. A temporary carrier is contacted to the back surface of the semiconductor and later removed. A backside-illuminated sensor is fabricated from the semiconductor lamina, in which the thickness of the semiconductor lamina remains substantially unchanged during the fabrication process. |
申请公布号 |
EP2812920(A4) |
申请公布日期 |
2015.10.07 |
申请号 |
EP20130746571 |
申请日期 |
2013.02.05 |
申请人 |
GTAT CORPORATION |
发明人 |
MURALI, VENKATESAN;CHARI, ARVIND;PRABHU, GOPAL;PETTI, CHRISTOPHER J. |
分类号 |
H01L27/146;H01L21/762;H01L27/14 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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