SEMICONDUCTOR STRUCTURE WITH ANTI-ETCH STRUCTURE IN VIA AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor structure includes a semiconductor substrate, a dielectric layer formed over the semiconductor substrate, a first anti-etch layer, a second anti-etch layer, and a conductive material. The dielectric layer has an opening. The first anti-etch layer is formed on the sidewall of the opening and made of a material having resistance to peroxide. The second anti-etch layer is formed over the first anti-etch layer and made of a material having resistance to acid. The conductive material is formed within the opening and in contact with the second anti-etch layer.