| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To manufacture an AlN layer of excellent quality at a low cost by using a commercially available MOCVD device where the limit of growth temperature is lower than about 1250°C. <P>SOLUTION: The manufacturing method of an AlN layer includes a first step for raising the temperature of a c plane Al<SB POS="POST">2</SB>O<SB POS="POST">3</SB>substrate to the growth temperature of 1000-1200°C for performing AlN growth in advance of AlN growth, a second step for growing the AlN layer at a growth temperature of 1000-1200°C on the c plane Al<SB POS="POST">2</SB>O<SB POS="POST">3</SB>substrate which has been heated at 1000-1200°C by the first step, a third step for annealing the AlN layer formed by the second step at a temperature of 1000-1250°C in H<SB POS="POST">2</SB>or N<SB POS="POST">2</SB>or a carrier gas mixed therewith or a process gas where the carrier gas is mixed with NH<SB POS="POST">3</SB>, and a fourth step for growing the AlN layer at a temperature of 1000-1250°C on the AlN layer annealed by the third step. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
