发明名称 |
Device comprising a high brightness broad-area edge-emitting semiconductor laser and method of making the same |
摘要 |
An embodiment of the invention relates to a device comprising an edge-emitting semiconductor laser, said laser having a multi-layered waveguide, and said waveguide comprising at least one layer with an active region that emits light under electrical injection, and at least one aperiodic layer stack. |
申请公布号 |
EP2913903(A3) |
申请公布日期 |
2015.10.07 |
申请号 |
EP20150152286 |
申请日期 |
2015.01.23 |
申请人 |
TECHNISCHE UNIVERSITÄT BERLIN |
发明人 |
BIMBERG, DIETER;KALOSHA, VLADIMIR |
分类号 |
H01S5/20;H01S5/32 |
主分类号 |
H01S5/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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