| 摘要 |
<p>A method for maintaining non-porous nickel layer at a nickel/passivation interface of a semiconductor device in a nickel/gold electroless plating process. The method can include sequentially electroless plating of each of the nickel layer and gold layer on the device layer to pre-determined thicknesses to prevent corrosion of the nickel layer from reaching the device layer during the electroless gold plating process.</p> |
