| 摘要 |
<p>An object of one embodiment of the present invention is to provide a deposition apparatus for depositing an oxide semiconductor film into which impurities are not mixed. Another object is to provide a method for manufacturing a semiconductor device including an oxide semiconductor film into which impurities are not mixed. Impurities are removed from an environment including a deposition apparatus, whereby a gas containing impurities may be prevented from leaking from the outside of the deposition apparatus to the inside thereof. In addition, an oxide semiconductor layer containing reduced impurities which is deposited by the apparatus may be applied to the semiconductor device.</p> |
