| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method and apparatus for growing atomic layer by using plasma, capable of forming a metal oxide film that is denser than the conventional one. <P>SOLUTION: In an atomic layer growth method, when forming a metal oxide film on a substrate using an organic metal gas as a source gas, the method comprises the steps of: causing to absorb the organic metal on the substrate by flowing the organic metal gas as the source gas above the substrate placed in a film forming space; generating plasma in the film forming space by using a first gas that does not chemically react with the organic metal; and after evacuating the first gas, generating plasma in the film forming space using an oxidizing gas by introducing the oxidizing gas as a second gas into the film forming space, thereby forming a metal oxide film on the substrate through oxidization of a metal component in the organic metal. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
