发明名称 Program method, data recovery method, and flash memory using the same
摘要 A program method for a multi-level cell (MLC) flash memory is provided. The memory array includes a plurality of pages and a plurality of paired pages, which correspond to the respective pages. The program method includes the following steps. Firstly, a program address command is obtained. Next, whether the program address command corresponding to any one of the paired pages is determined. When the program address command corresponds to a first paired page, which corresponds to a first page among the pages, among the paired pages, data stored in the first page to a non-volatile memory are copied. After that, the first paired page is programmed.
申请公布号 US9152557(B2) 申请公布日期 2015.10.06
申请号 US201414265400 申请日期 2014.04.30
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 Kuo Lung-Yi;Ho Hsin-Yi;Hung Chun-Hsiung;Hung Shuo-Nan;Chen Han-Sung
分类号 G06F3/06;G06F12/02;G11C16/10;G11C11/56;G06F11/00 主分类号 G06F3/06
代理机构 McClure, Qualey & Rodack, LLP 代理人 McClure, Qualey & Rodack, LLP
主权项 1. A program method for a non-volatile memory, the non-volatile memory comprising a memory array, the memory array comprising a plurality of first data units and a plurality of second data units for storing data bits, which respectively correspond to the first data units, the program method comprising: obtaining a program address command; determining whether the program address command corresponds to any one of the second data units; when the program address command corresponds to a target second data unit, which corresponds to a target first data unit among the first data units, among the second data unit, copying data stored in the target first data unit to a storage unit; and programming the target second data unit after the data stored in the target first data unit has been copied; wherein when a program fail event has taken place in a marked second data unit of the memory array, moving data stored in first data units, except the marked second data unit and a marked first data unit corresponding to the marked second data unit, to a clean memory block.
地址 Hsinchu TW