| 发明名称 | Lithographic photomask with inclined sides | ||
| 摘要 | A lithographic process will use a mask or photomask. The photomask includes a first material layer, the first material layer providing a first outer surface of the photomask. The photomask also includes a second material layer over the first material layer, the second material layer providing a second outer surface of the photomask. The two outer surfaces are substantially in parallel and a distance between the two outer surfaces along a first axis perpendicular to the two outer surfaces defines a thickness of the photomask. Also, the two outer surfaces are connected by a plurality of sides, at least one of the sides is not perpendicular to the two outer surfaces and the at least one of the sides provides substantial area for holding the lithographic photomask. | ||
| 申请公布号 | US9152035(B2) | 申请公布日期 | 2015.10.06 |
| 申请号 | US201314051942 | 申请日期 | 2013.10.11 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Yu Ching-Fang;Hsu Ting-Hao;Chin Sheng-Chi |
| 分类号 | G03F1/22;G03F1/24 | 主分类号 | G03F1/22 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A lithographic photomask comprising: a first material layer, the first material layer providing a first outer surface of the photomask; and a second material layer over the first material layer, the second material layer providing a second outer surface of the photomask, wherein: the two outer surfaces are substantially in parallel and a distance between the two outer surfaces along a first axis perpendicular to the two outer surfaces defines a thickness of the photomask; the two outer surfaces are connected by a plurality of sides; at least one of the sides is not perpendicular to the two outer surfaces; and the at least one of the sides provides substantial area for holding the lithographic photomask. | ||
| 地址 | Hsin-Chu TW | ||